Dual-sided image sensor

ABSTRACT

An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of the dual-sided image sensor is also captured within the same array of photosensitive regions.

TECHNICAL FIELD

This disclosure relates generally to imaging devices, and in particularbut not exclusively, relates to CMOS image sensors.

BACKGROUND INFORMATION

Image sensors have become ubiquitous. They are widely used in digitalstill camera, cellular phones, security cameras, as well as, medical,automobile, and other applications. The technology used to manufactureimage sensors, and in particular, complementary metal-oxidesemiconductor (“CMOS”) image sensors (“CIS”), has continued to advanceat great pace. For example, the demands of higher resolution and lowerpower consumption have encouraged the further miniaturization andintegration of these image sensors.

As pixel cells decrease, so does the size of the photodiodes includedwithin them. Smaller photodiodes results in the reduction of the dynamicrange of the CIS and a degradation of image quality. One approach toenhance the performance of small photodiodes is to increase the impurityconcentration of the sensor region of a photodiode. However, increasingthe impurity concentration of the sensing region of a photodiode tendsto cause undesirable effects, such as an increase in image lag.

The dynamic range of a CIS is the ratio of maximum and minimum lightintensities that an image sensor can capture. The full well capacity ofeach photodiode in an image sensor limits the image sensor's ability tocapture bright and dark subjects at the same time. As a result, if along exposure is used to capture dark subjects, bright subjects can losecontrast and become a bright spot. If a short exposure is used tocapture bright subjects, dark subjects could blend into a darkbackground and simply disappear.

Conventional techniques of obtaining one overlaid image from two imagescaptured independently and combining or referencing one onto anotherinclude using beam combiners and other optical devices to combine twooptical images into one optical path of incident light, which is exposedto a single image sensor. Other methods of obtaining one overlaid imageincludes using a camera module with a double-sided image sensor chipfabricated by adhering two front-side illuminated (“FSI”) image sensorchips together so that the pixel arrays are facing opposite directions.In this way, two images originating from independent sources can beimagined simultaneously, the images could be processed to obtain oneoverlaid image.

The former conventional technique introduces optical errors from thebeam combiners and other optical devices. The latter conventionaltechnique using back-to-back bonded FSI image sensor chips is bulky,which increases manufacturing costs. With the latter technique, the twoimages must be precisely aligned through signal processing, often doneindependently after acquiring each image, and the use of two FSI imagesensor chips to obtain one image doubles power consumption andmanufacturing costs of the camera module.

BRIEF DESCRIPTION OF THE DRAWINGS

Non-limiting and non-exhaustive embodiments of the invention aredescribed with reference to the following figures, wherein likereference numerals refer to like parts throughout the various viewsunless otherwise specified.

FIG. 1 is a functional block diagram illustrating a dual-sided imagesensor, in accordance with an embodiment of the invention.

FIG. 2 is a circuit diagram illustrating pixel circuitry of two 4Tpixels within a dual-sided image sensor, in accordance with anembodiment of the invention.

FIG. 3 is a block diagram illustrating an optical arrangement for adual-sided imaging system, in accordance with an embodiment of theinvention.

FIG. 4 is a cross sectional view dual-sided pixel cell, in accordancewith an embodiment of the invention.

FIGS. 5A and 5B are flow charts illustrating processes of operating adual-sided imaging system, in accordance with embodiments of theinvention.

FIGS. 6A and 6B are flow charts illustrating processes of fabricating adual-sided imaging system, in accordance with embodiments of theinvention.

FIGS. 7A-7D are block diagrams illustrating a process of fabricating adual-sided imaging system, in accordance with an embodiment of theinvention.

FIGS. 8A-8E are block diagrams illustrating a process of fabricating adual-sided imaging system, in accordance with an embodiment of theinvention.

DETAILED DESCRIPTION

Embodiments of an apparatus, method of operation, and method offabrication of a dual-sided image sensor are described herein. In thefollowing description numerous specific details are set forth to providea thorough understanding of the embodiments. One skilled in the relevantart will recognize, however, that the techniques described herein can bepracticed without one or more of the specific details, components,materials, etc. In other instances, well-known structures, materials, oroperations are not shown or described in detail to avoid obscuringcertain aspects.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present invention. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments.

FIG. 1 is a functional block diagram illustrating a dual-sided imagesensor 100, in accordance with an embodiment. The illustrated embodimentof dual-sided image sensor 100 includes a pixel array 105, readoutcircuitry 110, function logic 115, and control circuitry 120.

Pixel array 105 is a two-dimensional (“2D”) array of dual-sided,illuminated image sensors or pixels (e.g., pixels P1, P2 . . . , Pn). Inone embodiment, each pixel is a complementary metal-oxide-semiconductor(“CMOS”) imaging pixel. As illustrated, each pixel is arranged into arow (e.g., rows R1 to Ry) and a column (e.g., column C1 to Cx) toacquire image data of a person, place, or object, which can then be usedto render a 2D image of the person, place, or object.

After each pixel has acquired its image data or image charge, the imagedata is readout by readout circuitry 110 and transferred to functionlogic 115. Readout circuitry 110 may include amplification circuitry,analog-to-digital (“ADC”) conversion circuitry, or otherwise. Functionlogic 115 may simply store the image data or even manipulate the imagedata by applying post image effects (e.g., crop, rotate, remove red eye,adjust brightness, adjust contrast, or otherwise). In one embodiment,readout circuitry 110 may readout a row of image data at a time alongreadout column lines (illustrated) or may readout the image data using avariety of other techniques (not illustrated), such as a serial readoutor a full parallel readout of all pixels simultaneously.

Control circuitry 120 is coupled to pixel array 105 to controloperational characteristic of pixel array 105 (e.g., exposure window,exposure timing, image gain, etc.). For example, control circuitry 120may generate a shutter signal for controlling image acquisition. In oneembodiment, the shutter signal is a global shutter signal forsimultaneously enabling all pixels within pixel array 105 tosimultaneously capture their respective image data during a singleacquisition window. In an alternative embodiment, the shutter signal isa rolling shutter signal whereby each row, column, or group of pixels issequentially enabled during consecutive acquisition windows.

FIG. 2 is a circuit diagram illustrating pixel circuitry 200 of twofour-transistor (“4T”) pixels within pixel array 105, in accordance withan embodiment of the invention. Pixel circuitry 200 is one possiblepixel circuitry architecture for implementing each pixel within pixelarray 105 of FIG. 1. However, it should be appreciated that embodimentsof the present invention are not limited to 4T pixel architectures;rather, one of ordinary skill in the art having the benefit of theinstant disclosure will understand that the present teachings are alsoapplicable to 3T designs, 5T designs, and various other pixelarchitectures. In FIG. 2, pixels Pa and Pb are arranged in two rows andone column. The illustrated embodiment of each pixel circuitry 200includes a photodiode PD, a transfer transistor T1, a reset transistorT2, a source-follower (“SF”) transistor T3 and a select transistor T4.During operation, transfer transistor T1 receives a transfer signal TX,which transfers the charge accumulated in photodiode PD to a floatingdiffusion node FD. In one embodiment, floating diffusion node FD may becoupled to a storage capacitor (not shown) for temporarily storing imagecharges. Reset transistor T2 is coupled between a power rail VDD and thefloating diffusion node FD to reset (e.g., discharge or charge the FD toa preset voltage) under control of a reset signal RST. The floatingdiffusion node FD is coupled to control the gate of SF transistor T3. SFtransistor T3 is coupled between the power rail VDD and selecttransistor T4. SF transistor T3 operates as a source-follower providinga high impedance output from the pixel. Finally, select transistor T4selectively couples the output of pixel circuitry 200 to the readoutcolumn line under control of a select signal SEL. In one embodiment, theTX signal, the RST signal, and the SEL signal are generated by controlcircuitry 120.

FIG. 3 is a block diagram illustrating an optical arrangement for adual-sided imaging system 300, in accordance with an embodiment of theinvention. The illustrated embodiment of dual-sided imaging system 300includes dual-sided image sensor 100, a reflector 305, a backsideshutter 310, and a frontside shutter 315.

Reflector 305 along with backside shutter 310 and frontside shutter 315enable either backside illuminated (“BSI”) image data or frontsideilluminated (“FSI”) image data to be selectively captured using a singlepixel array 105 of dual-sided image sensor 100. For example, BSI imagedata may be captured by opening backside shutter 310 to permit backsideincident light to reach the backside of dual-sided image sensor 100,while closing frontside shutter 315 to block frontside incident lightfrom reaching the frontside of dual-sided image sensor 100.Alternatively, FSI image data may be captured by opening frontsideshutter 315 to permit frontside incident light to reach the frontside ofdual-sided image sensor 100, while closing backside shutter 310 to blockbackside incident light from reaching the backside of dual-sided imagesensor 100. Furthermore, if a combination overlay image is desired, thenboth backside shutter 310 and frontside shutter 315 may be opened duringeither overlapping or sequential exposure windows so that pixel array105 can capture image data from both sides. In a sequentialconfiguration, the image data captured by pixel array 105 from one sidemay simply be added to the image data previously captured from the otherside. Alternatively, in a sequential configuration, the FSI image dataand the BSI image data can be separately readout and combined as a postimage processing operation using function logic 115. Of course, itshould be appreciated that in embodiments where reduced selectively overthe combinations of FSI, BSI, and combination overlay images isacceptable or even desirable, then the present invention may beimplemented without one or both shutters 310 and 315.

In one embodiment, reflector 305 is a parabolic mirror positioned on oneside of dual-sided image sensor 100 (e.g., illustrated as positionedfacing the frontside) and capable of focusing light originating from theother side of dual-sided image sensor 100, as illustrated in FIG. 3. Inother embodiments, reflector 305 may be replaced with various opticalassemblies including a series of mirrors, beam splitters, and the like.In alternative embodiments, reflector 305 may be entirely eliminated tofacilitate an imaging device capable of capturing different images fromtwo different sides with a single dual-sided image sensor 100 (e.g,positioning dual-sided image sensor 100 with in a cell phone with thebackside positioned for capturing images from a backside of the cellphone while the frontside faces the operator for capturingself-portraits or facilitating video calls).

Each side of dual-sided image sensor 100 may or may not be covered witha filter array. For example, the backside may be covered by a chromaticfilter array (e.g., Bayer pattern filter array), while the frontside maybe covered by a monochromatic filter array for capturing monochromaticimage data (e.g., grayscale, black & white, etc.). One or both sides mayinclude an infrared filter array. Alternatively, one or both sides mayinclude no filter array.

Shutters 310 and 315 may be implemented as mechanical shutters orelectro-optical shutters. For example, shutters 310 and 315 may beliquid crystal display (“LCD”) shutters. In one embodiment, frontsideshutter 315 may be integrated into or onto reflector 305 and thereflective properties of reflector 305 itself directly manipulated bythe application of electrostatic fields. Of course, if only combinationoverlay images are desired, then both shutters 310 and 315 as well asreflector 305 may be eliminated.

Dual-sided imaging system 300 can facilitate a number of functions. Forexample, different optical filters can be applied to either side toimprove low light response, to achieve various types of image overlays,or even to improve the dynamic range of the imaging device. In oneembodiment, the FSI image data may be captured and used to either applypost image processing to the BSI image, or even captured first and thenanalyzed to configure pixel array 105 and/or readout circuitry 110 priorto capturing the BSI image data.

FIG. 4 is a cross sectional view of a dual-sided pixel cell 400, inaccordance with an embodiment of the invention. Dual-sided pixel cell400 represents one possible implementation of pixels P1, P2 Pn withinpixel array 105. Dual-sided pixel cell 400 is a BSI/FSI combinationdevice, having optical paths through both sides of the device thatpermit both frontside incident light and backside incident light toreach the photosensitive region.

The illustrated embodiment of dual-sided pixel cell 400 includes aphotosensitive region 405 disposed within an epitaxial layer 410,shallow trench isolations 415, pixel circuitry (only a portion isillustrated including photosensitive region 405, transfer transistor T1,and floating diffusion FD), a pinning layer 420, a dielectric layer 425,a metal stack 430, a frontside filter 435, a frontside microlens 440, abackside doped layer 445, a backside filter 450, and a backsidemicrolens 455. The illustrated embodiment of metal stack 430 includesmetal layers M1 and M2 separated by inter-metal dielectric layers 430Aand 430B.

Although FIG. 4 illustrates two metal layers, it should be appreciatedthat embodiments may include more or less metal layers separated byinter-metal dielectric layers. Metal stack 430 is patterned in such amanner as to create an optical passage through the metal layers suchthat frontside microlens 440 can direct frontside incident light ontothe topside of photosensitive region 405. Similarly, backside microlens455 is positioned to direct backside incident light onto the backside ofphotosensitive region 405. Although FIG. 4 illustrates the use of twomicrolenses, one on each side, embodiments of dual-sided pixel cell 400may be implemented without one or both microlenses 440 and 455.

Photosensitive region 405 may be implemented as a photodiode PD formedin epi layer 410. Pinning layer 420 is positioned at or near thefrontside surface of epi layer 410, but in other embodiments, pinninglayer 420 can be positioned elsewhere or even omitted entirely. In theillustrated embodiment, pinning layer 420 is a P type silicon layer,photosensitive region 405 is an N type silicon region, and epi layer 410is a P type silicon layer, forming a p-n-p photodiode structure. Inother embodiments the dopant polarities of the above layers can bereversed forming an n-p-n structure. In still other embodiments, epilayer 410 can be undoped or intrinsic silicon regardless of the dopantpolarities of pinning layer 420 and photosensitive region 405. Backsidedoped layer 445 (e.g., P+ doped for P doped epi layer 410) is also anoptional layer provided to passivate the backside surface and promoteupward migration of photo-generated charge carriers into photosensitiveregion 405, which are formed deep in epi layer 410 due to the backsideincident light.

Backside filter 450 and frontside filter 435 may be the same ordifferent filter material. In some embodiments, one or both sides maynot include an optical filter layer. However, since the optical paththrough the backside of dual-sided pixel cell 400 is not covered bymetal stack 430 it therefore has less physical constraints and it isoften a shorter optical path due to backside thinning of epi layer 410and the lack of metal stack 430. Thus, the BSI side may be well suitedfor higher quality, full color image acquisition, while the FSI side maybe well suited for alternative uses. For example, frontside filter 435may be implemented as an infrared filter (“IR”), while backside filter450 maybe be one element within a Bayer pattern color filter array. Inone embodiment, the FSI side may simply include a clear filter layerover the entire frontside of pixel array 105 without frontsidemicrolenses 440. In one embodiment, frontside filter 435 may be selectedto extend the dynamic range of the pixel cell. Backside filter 450 maybe a Bayer patterned color filter to receive chrominance informationfrom the BSI side, while frontside filter 435 may be optional or even aclear filter to obtain luminance information from the FSI side. In otherembodiments, both filters 435 and 450 maybe be Bayer patterned colorfilters. It should be appreciated that various combinations of filtertypes and microlenses (or lack thereof) may be used for the frontsideand backside of dual-sided pixel cell 400.

In one embodiment, dual-sided image sensor 100 may be operated withoutshutters 310 and 315 to simultaneously acquire high quality combinationoverlay images. However, as discussed above, dual-sided image sensor 100may be operated with one or both of shutters 310 and 315 to acquireseparate BSI image data and/or FSI image data. FIGS. 5A and 5B are flowcharts illustrating processes 500 and 501 for operating dual-sidedimaging system 300, in accordance with embodiments of the invention.

Process 500 (FIG. 5A) illustrates a method of operation which uses theFSI image data to reconfigure dual-sided image sensor 100 prior toacquiring the BSI image data. In a process block 505, the FSI image datais captured by pixel array 105 via the frontside incident light. In oneembodiment, this may include optically opening frontside shutter 315(e.g., causing frontside shutter 315 to become optically transmissive),while optically closing backside shutter 310. The frontside incidentlight results in photo-generated charge carriers, which are collectedwithin photosensitive region 405 of each pixel cell. In a process block510, the FSI image data is readout via readout circuitry 110 andanalyzed. In one embodiment, the FSI image data is analyzed either foran average luminance value of the entire pixel array or for individualluminance values of each pixel or groups of pixels within the pixelarray 105. In a process block 515, control circuitry 120 reconfiguresthe pixel circuitry of pixel array 105 and/or readout circuitry 110based on this analysis and prior to capturing the BSI image data. Forexample, control circuitry 120 may adjust or reconfigure the length ofthe exposure window (e.g., shutter signal), adjust the gain ofamplification circuitry, adjust whether a global shutter or rollingshutter is used, etc. Since the same pixel array 105 is used to captureboth of the FSI and BSI image data, pixel registration between the twodatasets is a simple matter of column/row addressing. Finally, in aprocess block 520, the BSI image data is captured using the samephotosensitive regions within pixel array 105. In one embodiment, theBSI image data is captured by optically opening backside shutter 315while optically closing frontside shutter 310.

In one embodiment, the photosensitive regions 405 of each pixel cellwithin pixel array 105 are reset (e.g., charged or discharged to apresent value) between capturing the FSI image data and the BSI imagedata. In one embodiment, weighted combination overlay images can beobtained using post image processing by sequentially capturing imageswith an intermediate reset between the FSI and BSI image captures. Pixelregistration between the sequentially captured images is achievedthrough column and row address which reduces the amount of processingcircuitry required to obtain an weighted overlay image. In analternative embodiment, photosensitive regions 405 are not reset betweenimage acquisition windows, but rather the BSI image charge is added tothe already stored FSI image charge. Sequential image captures withoutan intermediate reset of photosensitive region 405 enables generation ofcombination overlay images that use different length exposuretimes/windows between the BSI image data and the FSI image data. Thistechnique permits weighted combination overlay images without additionalpost image process circuitry.

Process 501 illustrates a method of operation which uses the FSI imagedata to apply post image processing to the BSI image data afteracquiring both image datasets. In a process block 530, the FSI imagedata is captured by pixel array 105 via the frontside incident light. Ina process block 535, the BSI image data is captured by pixel array 105via the backside incident light. The FSI image data and the BSI imagedata may be captured sequentially during offset exposure windows viaappropriate manipulation of shutters 310 and 315 in interchangeableorder. In a process block 540, the FSI image data is analyzed. In oneembodiment, the FSI image data is analyzed for luminance values. In aprocess block 545, post image processing is executed by function logic115 to adjust properties (e.g., brightness, contrast, etc.) of the BSIimage data using the FSI image data. In one embodiment, individual pixeldata portions of the BSI image data may be swapped for correspondingindividual pixel data portions from the FSI image data. Such pixelswapping may be used to increase the dynamic range of the compositeimage or combination overlay image for improved color performance at lowlight levels compared to the same image captured using an image sensorwith only a BSI or only an FSI optical path and only a single filterarray.

FIGS. 6A and 6B are flow charts illustrating processes 600 and 601,respectively, for fabricating dual-sided image sensor 100, in accordancewith embodiments of the invention.

Process 600 is described in connection with the block diagrams of FIGS.7A-7D. In a process block 605, the pixel circuitry (e.g., pixelcircuitry 200) is fabricated into or onto the frontside of epi layer 410following standard pixel circuitry fabrication techniques. In a processblock 610, the frontside components (e.g., metal stack 430, frontsidefilter 435, and frontside microlens 440) are formed over the frontsideof epi layer 410 (see FIG. 7A). In a process block 615, a recess 705 isetched out of the backside of wafer 710 under pixel array 105 (see FIG.7B). The recess provides backside access for fabricating the backsidecomponents (process block 620; see FIG. 7C). The backside components mayinclude backside doped layer 445, backside filter 450, and backsidemicrolens 455. Finally, in a process block 625 wafer 710 is diced andthe peripheral holding area 715 is removed (see FIG. 7D).

Process 601 is described in connection with the block diagrams of FIGS.8A-8E. In a process block 630, the pixel circuitry (e.g., pixelcircuitry 200) is fabricated into or onto the frontside of epi layer 410following standard pixel circuitry fabrication techniques. In a processblock 635, the frontside components (e.g., metal stack 430, frontsidefilter 435, and frontside microlens 440) are formed over the frontsideof epi layer 410 (see FIG. 8A). In a process block 640, a peripheralsacrificial layer 805 is formed around pixel array 105 (see FIG. 8B). Ina process block 645, a bonding wafer 810 is attached to the top ofperipheral sacrificial layer 805 forming a cavity 815 that protects thetop components of pixel array 105 (see FIG. 8C). The device wafer maythen be flipped over and held by bonding wafer 810, while the backsidesubstrate is thinned to expose epi layer 410, and the backsidecomponents are formed thereon (process block 650; see FIG. 8D). Finally,in a process block 655, bonding wafer 810 is removed and the devicewafer diced to liberate the individual dual-sided image sensors 100 (seeFIG. 8E).

Both fabrication techniques 600 and 601 follow conventional FSIfabrication processes to form metal stack 430 and create the frontsideoptical passage through the metal layers. The backside thinning may beperformed with a combination of chemical mechanical polishing (“CMP”)and chemical etching. The backside doped layer 445 may be implanted fromthe backside during backside processing prior to placement of backsidefilter 450 and backside microlens 455.

As described above, a CMOS image sensor having two-sided pixel cellswhere optical paths of incident light can reach the pixel array fromboth the frontside and the backside are described. This dual-sidedconfiguration can eliminate the need for bulky camera modules requiredto house back-to-back bonded FSI image sensor chips and even above beamcombiners and other optical devices used in conventional methods ofcapturing two images from separate optical sources and combining them toobtain one overlaid composite image. Another application of dual-sidedimage sensor 100 may be to capture two distinct images from separateoptical sources (or 180 degree opposite directions) and can be preciselyregistered onto the surface of the image sensor. Yet another applicationmay be to use the frontside and the backside to capture luminance andchrominance information, respectively, of the same image, which mayincrease the dynamic range of the combination overlay image.

It should be pointed out that the above description is based on animplementation using red, green and blue photosensitive elements. Thoseskilled in the art may appreciate that the description is equallyapplicable to other primary or complementary color filters. For example,magenta, yellow and cyan are a set of common alternative complementarycolors that can be used to produce color images. In addition, having aset of green photosensitive elements interleaved or interspersed withalternating red and blue photosensitive elements is not a requirement topractice embodiments of the invention.

The order in which some or all of the process blocks appear in eachprocess above should not be deemed limiting. Rather, one of ordinaryskill in the art having the benefit of the present disclosure willunderstand that some of the process blocks may be executed in a varietyof orders not illustrated.

The processes explained above may be described in terms of computersoftware and hardware. The techniques described may constitutemachine-executable instructions embodied within a machine (e.g.,computer) readable storage medium, that when executed by a machine willcause the machine to perform the operations described. Additionally, theprocesses may be embodied within hardware, such as an applicationspecific integrated circuit (“ASIC”) or the like.

A machine-readable storage medium includes any mechanism that provides(i.e., stores) information in a form accessible by a machine (e.g., acomputer, network device, personal digital assistant, manufacturingtool, any device with a set of one or more processors, etc.). Forexample, a machine-readable storage medium includesrecordable/non-recordable media (e.g., read only memory (ROM), randomaccess memory (RAM), magnetic disk storage media, optical storage media,flash memory devices, etc.).

The above description of illustrated embodiments of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific embodiments of, and examples for, the invention aredescribed herein for illustrative purposes, various modifications arepossible within the scope of the invention, as those skilled in therelevant art will recognize.

These modifications can be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific embodimentsdisclosed in the specification. Rather, the scope of the invention is tobe determined entirely by the following claims, which are to beconstrued in accordance with established doctrines of claiminterpretation.

What is claimed is:
 1. A dual-sided image sensor including a pixelarray, wherein each pixel of the pixel array comprises: a photosensitiveregion disposed within a single epitaxial layer; a metal stack disposedover a frontside of the single epitaxial layer and including an opticalpath through the metal stack to the photosensitive region for passingfrontside incident light to the photosensitive region; a backsidemicrolens disposed over a backside of the single epitaxial layer todirect backside incident light to the photosensitive region; pixelcircuitry coupled to the photosensitive region to capture frontsideimage data and backside image data from the photosensitive region; andreadout circuitry coupled to the pixel array to readout the frontsideimage data and the backside image data as a combination overlay imagethat combines the frontside image data with the backside image data,wherein the photosensitive region disposed within the single epitaxiallayer receives light through the backside and the frontside of thesingle epitaxial layer.
 2. The dual-sided image sensor of claim 1,further comprising: a backside filter array disposed between thebackside microlens and the single epitaxial layer to apply a first typeof filtering to the backside incident light; and a frontside filterarray disposed over the metal stack to apply a second type of filteringto the frontside incident light, wherein the first type of filtering isdifferent than the second type of filtering.
 3. The dual-sided imagesensor of claim 2, wherein the backside filter array comprises a colorfilter array to apply chromatic filtering to the backside incident lightand the frontside filter array comprises a monochromatic filter array.4. The dual-sided image sensor of claim 2, wherein the frontside filterarray comprises a clear filter array or an infrared filter array.
 5. Thedual-sided image sensor of claim 2, wherein each pixel of the pixelarray further comprises: a frontside microlens disposed over the metalstack and aligned to direct the frontside incident light through theoptical path to the photosensitive region.
 6. The dual-sided imagesensor of claim 1, further comprising: readout circuitry coupled to thepixel array to selectively readout the frontside image data separatelyfrom the backside image data.
 7. An imaging apparatus, comprising: adual-sided image sensor including: an array of photosensitive regionsdisposed within a single epitaxial layer; a metal stack disposed over afrontside of the semiconductor layer and including optical paths throughthe metal stack to the photosensitive regions for passing frontsideincident light to the photosensitive regions; a backside filter arraydisposed over a backside of the single epitaxial layer to filterbackside incident light prior to reaching the photosensitive regions;and readout circuitry coupled to readout frontside image data andbackside image data from the photosensitive regions, wherein each of thephotosensitive regions receives light through the backside and thefrontside of the single epitaxial layer; and a reflector positioned toreflect the frontside incident light onto a frontside of the dual-sidedimage sensor, wherein the frontside incident light originates from aregion facing a backside of the dual-sided image sensor.
 8. The imagingapparatus of claim 7, further comprising: a first shutter positioned toselectively block either the frontside incident light from reaching thefrontside of the dual-sided image sensor or backside incident light fromreaching the backside of the dual-sided image sensor.
 9. The imagingapparatus of claim 8, further comprising: a second shutter positioned toselectively block an opposite side of the dual-sided image sensor thanis blocked by the first shutter.
 10. The imaging apparatus of claim 7,wherein the dual-sided image sensor further comprises: an array ofmicrolenses disposed over the backside filter array to direct thebackside incident light to the photosensitive regions.
 11. The imagingapparatus of claim 10, wherein the dual-sided image sensor furthercomprises: a frontside filter array disposed over the frontside of thesingle epitaxial layer to filter the frontside incident light prior toreaching the photosensitive regions.
 12. The imaging apparatus of claim7, wherein the readout circuitry is coupled to readout the frontsideimage data and the backside image data from the photosensitive regionsas a combination overlay image that combines the frontside image datawith the backside image data.
 13. A method of operating a dual-sidedcomplementary metal-oxide semiconductor (“CMOS”) image sensor, themethod comprising: capturing frontside image data incident upon afrontside of the dual-sided CMOS image sensor within an array ofphotosensitive regions integrated into a single epitaxial layer of thedual-sided CMOS image sensor; capturing backside image data incidentupon a backside of the dual-sided CMOS image sensor within the array ofphotosensitive regions integrated into the single epitaxial layer,wherein each of the photosensitive regions receives light through thebackside and the frontside of the single epitaxial layer; reading outthe backside image data from the array of photosensitive regions;reading out the frontside image data from the array of thephotosensitive regions; and applying posting imaging processing to thebackside image data based upon the frontside image data.
 14. The methodof claim 13, wherein the frontside image data and the backside imagedata are captured during a single exposure window, wherein the frontsideimage data and the backside image data are combined within a singlecombination overlay image, and wherein reading out the backside imagedata and reading out the frontside image data occurs simultaneously. 15.The method of claim 13, wherein the frontside image data is capturedduring a first exposure window and the backside image data is capturedduring a second exposure window offset in time from the first exposurewindow, wherein the frontside image data is readout separate from thereading out the backside image data.
 16. A method of operating adual-sided complementary metal-oxide semiconductor (“CMOS”) imagesensor, the method comprising: capturing frontside image data incidentupon a frontside of the dual-sided CMOS image sensor within an array ofphotosensitive regions integrated into a single epitaxial layer of thedual-sided CMOS image sensor; analyzing of the frontside image data;configuring the dual-sided CMOS image sensor based on the analyzingprior to capturing backside image data; and capturing the backside imagedata incident upon a backside of the dual-sided CMOS image sensor withinthe array of photosensitive regions integrated into the single epitaxiallayer, wherein each photosensitive regions receives light through thebackside and the frontside of the single epitaxial layer, wherein thedual-sided CMOS image sensor is configured based on the analysis of thefrontside image data when capturing the backside image data; and readingout the backside image data from the array of photosensitive regions.17. The method of claim 16, wherein configuring the dual-sided CMOSimage sensor includes at least one of adjusting a gain setting,adjusting an exposure window, or adjusting a flash setting.
 18. Adual-sided image sensor including a pixel array, wherein each pixel ofthe pixel array comprises: a photosensitive regions disposed within asingle epitaxial layer; a metal stack disposed over a frontside of thesingle epitaxial layer and including an optical path through the metalstack to the photosensitive regios for passing frontside incident lightto the photosensitive region; a backside microlens disposed over abackside of the single epitaxial layer to direct backside incident lightto the photosensitive region; pixel circuitry coupled to thephotosensitive region to capture frontside image data and backside imagedata from the photosensitive region; a backside filter array disposedbetween the backside microlens and the single epitaxial layer to apply afirst type of filtering to the backside incident light; and a frontsidefilter array disposed over the metal stack to apply a second type offiltering to the frontside incident light, wherein the first type offiltering is different than the second type of filtering, wherein thebackside filter array comprises a color filter array to apply chromaticfiltering to the backside incident light and the frontside filter arraycomprises a monochromatic filter array, wherein the photosensitiveregion disposed within the single epitaxial layer receives light throughthe backside and the frontside of the single epitaxial layer.